symbol max p-channel units v ds v v gs v i dm i ar a e ar mj t j , t stg c symbol device typ max units n-ch 50 62.5 c/w n-ch 80 100 c/w r q jl n-ch 32 40 c/w p-ch 50 62.5 c/w p-ch 80 100 c/w r q jl p-ch 32 40 c/w pulsed drain current b 2 t a =70c power dissipation f t a =25c p d absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel continuous drain current f 30 -30 20 drain-source voltage 20 gate-source voltage t a =25c i d t a =70c w 7.2 6.2 64 2 1.44 1.44 a -40 -4.5 -5.3 maximum junction-to-lead c steady-state thermal characteristics: n-channel and p-channel parameter maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a steady-state maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a maximum junction-to-lead c steady-state steady-state repetitive avalanche energy 0.3mh b 12 43 avalanche current b junction and storage temperature range -55 to 150 -55 to 150 9 17 AO4620 complementary enhancement mode field effect transis tor features n-channel p-channel v ds (v) = 30v -30v i d = 7.2a (v gs =10v) -5.3a (v gs = -10v) r ds(on) r ds(on) < 24m w (v gs =10v) < 32m w (v gs = -10v) < 36m w (v gs =4.5v) < 55m w (v gs = -4.5v) 100% uis tested 100% rg tested general description the AO4620 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. g1 d1 s1 n-channel p - channel g2 d2 s2 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 alpha & omega semiconductor, ltd. www.aosmd.com
AO4620 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 17.7 24 t j =125c 25 32 24.8 36 m w g fs 20 s v sd 0.74 1 v i s 2.5 a i sm 64 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 1.8 2.8 w q g (10v) 7.2 11 nc q g (4.5v) 3.5 nc q gs 1.3 nc q gd 1.7 nc t d(on) 4.5 ns t r 2.7 ns t d(off) 14.9 ns t f 2.9 ns t rr 10.5 12.6 ns q rr 4.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =7.2a v gs =10v, i d =7.2a r ds(on) static drain-source on-resistance v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v v gs =10v, v ds =5v n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current forward transconductance diode forward voltage output capacitance turn-on delaytime gate threshold voltage gate-body leakage current v gs =10v, v ds =15v, r l =2.1 w , r gen =3 w dynamic parameters v gs =10v, v ds =15v, i d =7.2a total gate charge gate drain charge reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters on state drain current maximum body-diode continuous current input capacitance body diode reverse recovery charge i f =7.2a, di/dt=100a/ m s total gate charge gate source charge turn-on rise time turn-off delaytime turn-off fall time pulsed body-diode current b body diode reverse recovery time gate resistance v gs =0v, v ds =0v, f=1mhz i f =7.2a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the value in any given application depends on the user's specific boa rd design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction t emperature. c. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the soa curve provides a single pulse rating. f.the power dissipation and current rating are based on the t 10s thermal resistance rating. rev 8: may 2012 alpha & omega semiconductor, ltd. www.aosmd.com
AO4620 n-channel typical electrical and thermal characteri stics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 25 125 c v ds =5v v gs =4.5v v gs =10v i d =7.2a 25 c 125 5v 6v 10 15 20 25 30 35 40 45 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v id=7.7a v gs =4.5v id=5a 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =7.7a 25 c 125 c 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v alpha & omega semiconductor, ltd.
AO4620 n-channel typical electrical and thermal characteri stics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss v ds =15v i d =7.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =100 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =15v i d =7.7a 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd.
AO4620 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.3 -1.85 -2.4 v i d(on) -40 a 23 32 t j =125c 31.5 33 55 m w g fs 19 s v sd -0.8 -1 v i s -3.5 a i sm -40 a c iss 760 pf c oss 140 pf c rss 95 pf r g 3.2 5 w q g (10v) 13.6 16 nc q g (4.5v) 6.7 nc q gs 2.5 nc q gd 3.2 nc t d(on) 8 ns t r 6 ns t d(off) 17 ns t f 5 ns t rr 15 ns q rr 9.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time m a i dss gate threshold voltage v ds =v gs i d =-250 m a v ds =-30v, v gs =0v v ds =0v, v gs =20v m w r ds(on) forward transconductance diode forward voltage v gs =-4.5v, i d =-4.5a body diode reverse recovery charge i f =-5.3a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5.3a reverse transfer capacitance i f =-5.3a, di/dt=100a/ m s zero gate voltage drain current gate-body leakage current i s =-1a,v gs =0v v ds =-5v, i d =-5.3a static drain-source on-resistance turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-5.3a pulsed body-diode current b a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the value in any given application depends on the user's specif ic board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction t emperature. c. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev8: may 2012 alpha & omega semiconductor, ltd.
AO4620 p-channel typical electrical and thermal characteri stics 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v i d =-5.6a 25 c 125 c i d =-5.6a i d =-4.5a 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 10 15 20 25 30 35 40 45 50 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =-4.5v v gs =-10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =-4.5v i d =-4.5a v gs =-10v i d =-5.3a 0 20 40 60 80 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage 125 c 25 c i d =-5.3a 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs = - 3v -3.5v - 6v - 5v -10v - 4.5v -4v alpha & omega semiconductor, ltd.
AO4620 p-channel typical electrical and thermal characteri stics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss v ds =-15v i d =-5.3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =100 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10ms 1ms 10s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 0.1s 10 m s alpha & omega semiconductor, ltd.
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